![Initial letter L and V, , , VL, overlapping interlock logo, monogram line art style, si, er gold on black background Stock-vektor | Adobe Stock Initial letter L and V, , , VL, overlapping interlock logo, monogram line art style, si, er gold on black background Stock-vektor | Adobe Stock](https://as1.ftcdn.net/v2/jpg/02/18/88/20/1000_F_218882032_4GxL55Dst6zmCnvaCZ375RT3guW5Rj3M.jpg)
Initial letter L and V, , , VL, overlapping interlock logo, monogram line art style, si, er gold on black background Stock-vektor | Adobe Stock
![Sandia's National Security Photonics Center (NSPC) – Microsystems Engineering, Science and Applications (MESA) Sandia's National Security Photonics Center (NSPC) – Microsystems Engineering, Science and Applications (MESA)](https://www.sandia.gov/app/uploads/sites/145/2021/10/3-17.jpg)
Sandia's National Security Photonics Center (NSPC) – Microsystems Engineering, Science and Applications (MESA)
![Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions | Nature Energy Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions | Nature Energy](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fnenergy.2017.144/MediaObjects/41560_2017_Article_BFnenergy2017144_Fig5_HTML.jpg)
Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions | Nature Energy
![Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits | ACS Nano Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits | ACS Nano](https://pubs.acs.org/cms/10.1021/acsnano.2c00334/asset/images/large/nn2c00334_0001.jpeg)
Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits | ACS Nano
![Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits | ACS Nano Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits | ACS Nano](https://pubs.acs.org/cms/10.1021/acsnano.2c00334/asset/images/medium/nn2c00334_0002.gif)